IDGNS2014Top.jpg



2nd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-2)

Date: October 30-31, 2014
Location: Conference room (1st floor) South Multidisciplinary Research Laboratory 2, Katahira Campus, Tohoku University, Sendai, Japan
Circular for Workshop
IDGN-2 take place E-03 in this campus map

Prospectus of Workshop

  Staring from the vapor-phase growth of GaN by H. P. Marcus and J. J. Tietjen in 1969, the research on nitride semiconductors has progressed with a focus on GaN. Nitride LEDs and LDs have been widely used as solid state lighting for energy saving and high-density recording such as Blu-ray, since blue LEDs became commercially available in 1996. Nitride transistors with high-frequency and high-power will come to realization in near future. Recently, nitride solar cells have been studied for covering over the whole range of solar spectrum. Thus, the device application has progressed in a variety of fields; however, the crystalline quality is still poor in comparison with conventional III-V semiconductors such as GaAs and InP. For the future development in high efficiency, long device-lifetime, and the expansion of application, it is indispensable to improve the crystalline quality and to control the crystal characteristics.
  The purpose of the workshop is to analyze the status quo, find the direction to take in the future and the problems that need to be solved in the field of crystal growth of nitride semiconductors. To achieve this, the number of participants is limited to 50 persons including researchers from abroad, and the straightforward discussions are greatly encouraged among the selected professionals. Participants are expected to have common understandings in the current technologies and to find out the way to solve problems in the crystal growth. In the workshop, some selected topics will be presented at the beginning of each session, and the participants voluntarily present their data, which is followed by deep-and-intensive discussion. This style is not common but will bring us significant outcome. We are looking forward to seeing you all here in Heart of Northeast area of Japan, City of Sendai.

Chairs: T. Matsuoka and H. Fukuyama

Schedule

29th October, 2014 Wednesday 19:00 ~ 20:00

+ open/close

30th October, 2014 Thursday 9:00 ~ 18:10

+ open/close

31st October, 2014 Friday 9:00 ~ 17:00

+ open/close


Registration

Registration Fee

20,000 JPY

Deadline

  • October 17th, 2014
  • October 20th, 2014
  • All the participants are required to contact the agency below.
  • Registration has been closed. Thank you so much!

Payment

  • On site, cash (JPY) payment only.
  • On October 29th, please visit The Westin Sendai directly which opens at 18:30.
  • On October 30th and 31st, please visit the registration desk which opens at 8:00 8:30 am.

Contact

Tomoyuki Tanikawa
Institute for Materials Research, Tohoku university
2-1-1, Katahira, Aoba-ku, Sendai,980-8577, Japan
1-4-1, Omachi, Aoba-ku, Sendai, Miyagi, 980-0804, JAPAN
TEL: +81-22-215-2621, FAX: +81-22-215-2302
E-mail: tanikawa[at]imr.tohoku.ac.jp

Sponsorship

?plugin=attach&refer=WNS&openfile=IMRAM.jpg
IMR.jpg


Last updated: 2016-09-01 (木) 20:31:10
Last-modified: 2016-09-01 (木) 20:31:10 (719d) トップ   編集 凍結解除 差分 バックアップ 添付 複製 名前変更 リロード   新規 一覧 単語検索 最終更新   ヘルプ   最終更新のRSS