3rd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-3)

Date: January 16-18, 2017
Location: Auditorium, Bldg. 2, Institute for Materials Research, Tohoku University , Katahira Campus, Tohoku University, Sendai, Japan
IDGN-3 Circular is here


Photos were uploaded.

Prospectus of Workshop

  Staring from the vapor-phase growth of GaN by H. P. Marcus and J. J. Tietjen in 1969, the research on nitride semiconductors has progressed with a focus on GaN. Nitride LEDs and LDs have been widely used as solid state lighting for energy saving and high-density recording such as Blu-ray, since blue LEDs became commercially available in 1996. Nitride transistors with high-frequency and high-power will come to realization in near future. Recently, nitride solar cells have been studied for covering over the whole range of solar spectrum. Thus, the device application has progressed in a variety of fields; however, the crystalline quality is still poor in comparison with conventional III-V semiconductors such as GaAs and InP. For the future development in high efficiency, long device-lifetime, and the expansion of application, it is indispensable to improve the crystalline quality and to control the crystal characteristics.
  The purpose of the workshop is to analyze the status quo, find the direction to take in the future and the problems that need to be solved in the field of crystal growth of nitride semiconductors. To achieve this, the number of participants is limited to 50 persons including researchers from abroad, and the straightforward discussions are greatly encouraged among the selected professionals. Participants are expected to have common understandings in the current technologies and to find out the way to solve problems in the crystal growth. In the workshop, some selected topics will be presented at the beginning of each session, and the participants voluntarily present their data, which is followed by deep-and-intensive discussion. This style is not common but will bring us significant outcome. We are looking forward to seeing you all here in Heart of Northeast area of Japan, City of Sendai.

Chairs: T. Matsuoka and H. Fukuyama

Time Table (PDF file is here)

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Registration Fee

20,000 JPY which includes:

  • Admission to all technical sessions
  • Workbook with program overview and abstracts
  • Attendance to the welcome reception and banquet


  • On site, cash (JPY) payment only.


Tomoyuki Tanikawa
Institute for Materials Research, Tohoku university
2-1-1, Katahira, Aoba-ku, Sendai,980-8577, Japan
TEL: +81-22-215-2621, FAX: +81-22-215-2302
E-mail: tanikawa[at]

Comittee Members

Takashi Matsuoka, IMR, Tohoku University
Hiroyuki Fukuyama, IMRAM, Tohoku University
Makoto Ohtsuka, IMRAM, Tohoku University
Kazunobu Kojima, IMRAM, Tohoku University
Shigeyuki Kuboya, IMR, Tohoku University
Momoko Deura, IMR, Tohoku University
Masayoshi Adachi, IMRAM, Tohoku University
Tomoyuki Tanikawa, IMR, Tohoku University
Miho Matsuura, IMR, Tohoku University



Last updated: 2017-01-20 (金) 15:43:38
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